碳化硅加热元件的电性能和使用

本文介绍碳化硅加热元件的电特性、表面负荷以及工作气氛对它的影响，并对它设计和使用要点举例予以说明。     

多孔材料气体流量的简便计算

采用简便方法计算气体通过多孔材料的流量。当层流时，流量与压差按线性关系计算；紊流时，应按幂函数关系计算。本文提出了计算公式。     

SAPO-34/SiO_2催化甲醇制烯烃

采用水热法合成了SAPO-34分子筛,并用X射线粉末衍射仪和扫描电子显微镜对SAPO-34分子筛的结构进行了表征,同时探讨了黏合剂种类、甲醇分压、催化剂粒径和硅源等对SAPO-34分子筛催化甲醇制烯烃(MTO)反应性能的影响。实验结果表明,在MTO反应中,三烯(乙烯、丙烯和丁烯)选择性在反应初期存在明显的诱导期;以S iO2为黏合剂合成的SAPO-34/S iO2催化剂不但可缩短MTO反应的诱导期,三烯选择性也较未添加黏合剂或以A l2O3为黏合剂时高1~2个百分点;且当催化剂活性明显下降时,三烯选择性下降的幅度较小。催化剂粒径、甲醇分压及硅源对催化剂的诱导期也有明显的作用。在甲醇分压低于19kPa、催化剂粒径0.25~0.38mm、S iO2为黏合剂、硅酸四乙酯为硅源时,SAPO-34/S iO2催化剂的MTO性能明显提高。     

Effect of chloride ions on immersion plating of copper onto porous silicon from a methanol solution

The effect of chloride ions (Cl⁻) during the immersion plating of copper onto porous silicon (PS) from a methanol (MeOH) solution has been studied. The presence of Cl⁻ in the Cu²⁺ solution was found to slow down the rate of copper deposition, as confirmed by inductively coupled argon plasma emission spectroscopy and X-ray photoelectron spectroscopy measurements. The threshold concentration of Cl⁻ at which the deposition of copper is very severely diminished was found to be 0.1 M. The inhibition effect is discussed on the basis of the rest potential values of PS and polarization curve measurements. They revealed that the rest potential of PS upon dipping in these solutions appears to direct the metal deposition. Current density-potential curves show that at Cl⁻ concentrations higher than 0.1 M, the reduction of Cu ions proceeds in two steps; the reduction of Cu(II) to Cu(I) followed by the reduction of Cu(I) to Cu(0). This suggests that Cu(I) species in MeOH solution can be stable over a certain potential range and this stability of Cu(I) is responsible for the inhibition of metal deposition. Fourier transform infrared spectroscopy and scanning electron microscopy (SEM) were also performed to investigate the structural changes and characterizations of PS samples after the plating process.     

Dependence of Silicon Carbide Product Morphology on the Degree of Mechanical Activation

Mechanical activation before carbothermic reduction can substantially enhance the formation of SiC from SiO₂and carbon mixtures. However, the morphology (e.g., particles or whiskers) of SiC formed from mechanically activated SiO₂and carbon mixtures is dependent of the degree of mechanical activation and the condition of the subsequent carbothermic reduction. These phenomena are investigated and rationalized based on the increased reactivity of the reactants and SiC formation mechanisms.     

Solid-state NMR as a probe of porous catalysts and catalytic processes

The power of solid-state NMR for the interrogation of porous catalytic materials is illustrated using three examples. First, for the investigation of catalytic processes occurring within the confines of a microporous catalyst NMR is shown to reveal both the details of shape-selectivity and the nature of internal surface species. Second, NMR is shown to be a powerful short-range tool to reveal precise structural information on highly disordered microporous titanosilicates. Despite long-range disorder the short-range order is maintained and can be easily studied. Finally, the same utility of probing short-range chemical phenomena is shown to be crucial for the investigation of novel-ordered-amorphous-mesoporous materials known generically as M41S. This class of material is currently one of the most important with potential catalytic application.     

A novel integration approach for combining the components to minimize a micro-fuel cell

This work employs porous silicon as a gas diffusion layer (GDL) in a micro-fuel cell. Pt catalyst is deposited on the surface of, and inside, the porous silicon by the physical vapor deposition (PVD) method, to improve the porous silicon conductivity. Porous silicon with Pt catalyst replaces traditional GDL, and the Pt metal that remains on the rib is used to form a micro-thermal sensor in a single lithographic process.     

TFT有源矩阵α－Si∶H薄膜PECVD淀积工艺研究

分析了α－Ｓｉ∶Ｈ薄膜的质量和厚度对α－Ｓｉ∶ＨＴＦＴ关键性指标的影响，深入、详细地讨论了其ＰＥＣＶＤ淀积工艺，并在实验的基础上确定了最佳淀积工艺参数，从而获得了高性能的７５ｍｍ３７２×２７６像素α－Ｓｉ∶ＨＴＦＴ有源矩阵     

利用分形几何确定多孔介质的孔尺寸分布

提出了利用分形几何确定多孔介质孔尺寸分布的方法。考虑多孔介质中孔间的屏蔽，采用此方法得到的孔尺寸分布范围比采用平行孔模型宽，分别采用本方法和平行孔模型测定γ－Al2O3催化剂的孔尺寸分布，构造简单立方体三维网络模型模拟压汞过程，并将模拟曲线与γ－Al2O3压汞实验曲线比较，结果表明，采用本方法所得孔尺雨分布优于平行孔模型所得孔尺寸分布。     

Holmium-doped Porous Silicon Prepared by a New Electrochemical Approach and Its Photoluminescence

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